- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377517 > IRGNC30FD2 (International Rectifier) Fit Rate / Equivalent Device Hours PDF資料下載
參數(shù)資料
| 型號： | IRGNC30FD2 |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時(shí) |
| 文件頁數(shù)： | 27/35頁 |
| 文件大小： | 112K |
| 代理商： | IRGNC30FD2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
TEMPERATURE CYCLING (T/C) Unbiased
Conditions
Temperature:
Tmin = - 55°C
Tmax = + 150°C
Unbiased
2000 Cycles
250,500,1000,1500,2000 Nominal
Bias:
Duration:
Test points:
Purpose
Failure Modes
Sensitive Parameters
I
CES,
V
(BR)CES,
R
θ
JC,
V
CE(on)
Temperature Cycling simulates the extremes of thermal stresses which devices will
encounter in the actual circuit applications in combination with potentially extreme
operating ambient temperatures. Some equipment is destined to be used in extreme
environments, and subject to daily temperature cycles.
The primary failure mode for temperature cycling is a thermal fatigue of the silicon / metal
interfaces and metal / metal interfaces. The fatigue results from thermomechanical
stresses due to heating and cooling and will cause electrical or thermal performance to
degrade.
If the degradation occurs at the header / die interface, then the thermal impedance,
R
θ
JC
will begin to increase well before any electrical effect is seen.
If the degradation occurs at the wire bond / die interface or the wire bond / bond post
interface, then on resistance,
V
CE(on)
, will slowly increase or become unstable with time.
The thermal impedance, when measured during this time, may appear to decrease or
change erratically.
The mechanical stresses from the temperature can also propagate fractures in the silicon
when the die is thermally mismatched to the solder / heat sink system. These fractures
will manifest themselves in the form of shorted gates or degraded breakdown
characteristics (
V
(BR)CES
)
IGBT / CoPack
Quarterly Reliability Report
Page 27 of 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4BG40FD | Fit Rate / Equivalent Device Hours |
| IRG4BG40KD | Fit Rate / Equivalent Device Hours |
| IRG4BG40MD | Fit Rate / Equivalent Device Hours |
| IRG4BG40SD | Fit Rate / Equivalent Device Hours |
| IRG4BG40UD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGNI0025M12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 25A I(C) |
| IRGNI0050M12 | 功能描述:整流器 1200 Volt 50 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| IRGNI0075M12 | 功能描述:整流器 1200 Volt 75 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| IRGNI0100M12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 100A I(C) |
| IRGNI050U06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。