參數(shù)資料
型號： IRGP4068DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
中文描述： 絕緣柵雙極晶體管的超低壓變頻二極管感應加熱與軟交換應用
文件頁數(shù)： 1/10頁
文件大?。?/td> 336K
代理商： IRGP4068DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068DPbF
IRGP4068D-EPbF
1
www.irf.com
08/16/06
E
G
n-channel
C
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Features
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra-low V
F
Hyperfast Diode
Tight parameter distribution
Lead Free Package
Benefits
Device optimized for induction heating and soft switching
applications
High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
G
C
E
Gate
Collector
Emitter
TO-247AC
IRGP4068DPbF
TO-247AD
IRGP4068D-EPbF
GCE
C
GCE
C
Absolute Maximum Ratings
Parameter
Max.
600
96
48
192
192
8.0
175
16
±20
±30
330
170
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 160°C
I
FSM
I
FM
V
GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
Diode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
A
V
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
2.0
–––
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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