參數(shù)資料
型號: IRGPC20K
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁數(shù): 7/7頁
文件大小: 108K
代理商: IRGPC20K
4 8 0 V
4
I
C
@
2 5 ° C
X
IRGPC20K
D.U.T.
50V
L
V *
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
1000V
Fig. 13a
-
Clamped Inductive
Load Test Circuit
Fig. 13b
-
Pulsed Collector
Current Test Circuit
480μF
960V
0 -
4 8 0 V
R
L
=
t=5μs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
E = (E +E )
Fig. 14b
-
Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a
-
Switching
Loss Test Circuit
*
t y p e
D.U.T.,
4 8 0 V
Driver
same
as
VC
=
相關(guān)PDF資料
PDF描述
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IRGPC40F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRGPC40MD2 Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
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