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參數(shù)資料
| 型號(hào)： | IRGPC30K |
| 廠(chǎng)商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門(mén)雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 110K |
| 代理商： | IRGPC30K |
IRGPC30K
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0.60
0.64
0.68
0.72
0.76
0.80
0
10
20
30
40
50
60
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25°C
I = 14A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
A
R = 23
V = 15V
V = 480V
I = 28A
I = 14A
I = 7.0A
0
200
400
600
800
1000
1200
1400
1
10
100
C
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
20
30
40
V
Q , Total Gate Charge (nC)
A
V = 400V
I = 14A
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PDF描述 |
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| IRGPC30MD2 | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| IRGPC40F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRGPC40MD2 | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| IRGPC40M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| IRGPC40U | Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPC30KD2 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述: |
| IRGPC30M | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC30MD2 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC30S | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC30U | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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