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參數(shù)資料
| 型號： | IRGPC30KD2 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）的超快軟恢復(fù)二極管（帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRGPC30KD2 |
IRGPC30KD2
Short Circuit Rated
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Short circuit rated -10μs @125°C, V
GE
= 15V
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
TM
soft ultrafast diodes
E
G
n-channel
C
V
CES
= 600V
V
CE(sat)
≤
3.8V
@V
GE
= 15V, I
C
= 14A
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
1.2
2.5
------
40
------
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
PD - 9.1111
T
O-247AC
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Foward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
14
46
46
12
46
10
± 20
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
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|---|---|
| IRGPF50 | |
| IRGPF50F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
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