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參數(shù)資料
| 型號(hào)： | IRGPC40M |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（短路額定快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 41K |
| 代理商： | IRGPC40M |
C-328
IRGPC40M
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
59
—
8.6
—
25
—
26
—
37
—
240
—
230
—
0.75
—
1.65
—
2.4
10
—
Conditions
80
10
42
—
—
410
420
—
—
3.6
—
I
C
= 24A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 24A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
nC
ns
mJ
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10
, V
CPK
< 500V
T
J
= 150°C
I
C
= 24A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail"
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
28
37
380
460
4.5
13
1500
190
20
—
—
—
—
—
—
—
—
—
ns
mJ
nH
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
pF
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
20
—
—
0.70
—
2.0
—
2.6
—
2.4
3.0
—
—
-12
9.2
12
—
—
—
—
1000
—
—
±100
Conditions
—
—
—
—
—
—
5.5
—
—
250
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 24A
I
C
= 40A
I
C
= 24A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 24A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ±20V
V/°C
V
V
GE
= 15V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
I
GES
Gate-to-Emitter Leakage Current
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 5.0μs,
single shot.
Pulse width
≤
80μs; duty factor
≤
0.1%.
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
Refer to Section D for the following:
Package Outline 3
- JEDEC Outline TO-247AC
Section D - page D-13
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