- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377520 > IRGPH50S (International Rectifier) Aluminum Electrolytic Radial Leaded Low Leakage Current Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 4x7 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | IRGPH50S |
| 廠商： | International Rectifier |
| 英文描述： | Aluminum Electrolytic Radial Leaded Low Leakage Current Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 4x7 mm; Packaging: Bulk |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 33A條） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 96K |
| 代理商： | IRGPH50S |
C-49
Revision 0
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
0.64
—
40
—
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
IRGPH50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses
Optimized for line frequency operation (to 400Hz)
See Fig. 1 for Current vs. Frequency curve
V
CES
= 1200V
V
CE(sat)
≤
2.0V
@V
GE
= 15V, I
C
= 33A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
57
33
110
110
±20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
TO-247AC
Preliminary Data SheetPD - 9.760
Index
Previous Datasheet
Next Data Sheet
To Order
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPH50 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
| IRGPH50FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A) |
| IRGPH50F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
| IRGPH50MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A) |
| IRGR3B60KD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPH60UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPS4067DPbF | 功能描述:IGBT 晶體管 600V 1.6V 120A Solar UPS Welding RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGPS40B120U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPS40B120UD | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 1.2KV 80A 3-Pin (3+Tab) TO-274AA 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 80A, Transistor Type:IGBT, DC Collector Current:80A, Collect |
| IRGPS40B120UDP | 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。