參數(shù)資料
型號(hào): IRH93250
廠商: International Rectifier
英文描述: P-Channel, -200 Volt, 0.315 Ω, RAD HARD HEXFET(P 溝道,-200 V,0.315 Ω,抗輻射 HEXFET晶體管)
中文描述: P溝道,-200伏,0.315Ω,RAD數(shù)據(jù)通信硬的HEXFET性(P溝道,-200五,0.315Ω,抗輻射的HEXFET晶體管)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 107K
代理商: IRH93250
IRH9250, IRH93250
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
50
100
150
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-14 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
1
10
100
1000
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
Pre-Irradiation
1
10
100
0
2000
4000
6000
8000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.0
0.5
-V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
-
S
V = 0 V
T = 150 C
°
T = 25 C
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