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參數(shù)資料
| 型號： | IRHF53230 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| 中文描述： | 為200V，N溝道通孔抗輻射功率MOSFET（200V的電壓，通孔安裝抗輻射功率?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRHF53230 |
www.irf.com
3
Radiation Characteristics
IRHF57230
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 — 200 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.204 — 0.255
V
GS
= 12V, I
D
=4.5A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.22 — 0.275
V
GS
= 12V, I
D
=4.5A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57230, IRHF53230 and IRHF54230
2. Part number IRHF58230
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 7.3A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 200 200 150 100 50
I
59.8
341 32.5 200 100 40 35 30
Au
82.3
350 28.4 50 35 25
LET
Energy Range
V
DS
(V)
— —
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHF58230 | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHF54Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHF53Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHF57Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHF58Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF53234SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53234SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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