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參數(shù)資料
| 型號： | IRHF54230 |
| 廠商： | International Rectifier |
| 英文描述： | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| 中文描述： | 為200V，N溝道通孔抗輻射功率MOSFET（200V的電壓，通孔安裝抗輻射功率?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF54230 |
www.irf.com
5
Pre-Irradiation
IRHF57230
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
7.3A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25°
°
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
0
300
600
900
1200
1500
1800
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
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