參數(shù)資料
型號(hào): IRHF57034
廠商: International Rectifier
英文描述: 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
中文描述: 60V的N通道通孔抗輻射功率MOSFET(60V的通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 130K
代理商: IRHF57034
IRHF57034
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.1
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
7.0V
V , Drain-to-Source Voltage (V)
I
D
5.0V
0.1
1
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
1
10
100
1000
5
7
9
11
13
15
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
°
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
12V
12A
相關(guān)PDF資料
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IRHF58034 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHF54230 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHF53230 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHF58230 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHF54Z30 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
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