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參數(shù)資料
| 型號： | IRHF7430SE |
| 廠商： | International Rectifier |
| 英文描述： | N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 溝道 單事件效應(yīng) Rad Hard HEXFET技術(shù)晶體管) |
| 中文描述： | N通道單粒子效應(yīng)（見）拉德硬的HEXFET晶體管（不適用溝道單事件效應(yīng)拉德硬盤的HEXFET技術(shù)晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IRHF7430SE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
IRHF7430SE
2.6
1.6
10.4
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
25
0.2
±20
148
2.6
2.5
8.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
0.98 (typical)
Weight
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Pre-Irradiation
I
nternational Rectifier’s (SEE) RAD HARD technol-
ogy HEXFETs demonstrate immunity to SEE fail-
ure. No compensation of gate drive circuitry is re-
quired because pre and post-irradiation electrical
test conditions are identical. These devices are
also capable of surviving transient ionization pulses
as high as 1 x 10
12
Rads (si)/Sec, and return to
normal operation within a few microseconds. Since
the SEE process utilizes International Rectifier’s
patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of par-
alleling and temperature stability of the electrical
parameters. They are well-suited for applications
such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers and high-en-
ergy pulse circuits in space and weapons
environments.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHF7430SE
5/14/99
www.irf.com
1
Part Number
BV
DSS
R
DS(on)
1.6
I
D
IRHF7430SE
500V
2.6A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
Product Summary
500Volt, 1.6
, SEE RAD HARD HEXFET
PD - 91863A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF7430SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF7430SESCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF8110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF8110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF8110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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