- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377521 > IRHG57110 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHG57110 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
| 中文描述： | 抗輻射功率MOSFET的通孔（莫- 036） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRHG57110 |
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
08/01/02
www.irf.com
1
MO-036AB
IRHG57110
100V, Quad N-CHANNEL
RAD-Hard
TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Product Summary
Part Number Radiation Level R
DS(on)
IRHG57110 100K Rads (Si) 0.29
IRHG53110 300K Rads (Si) 0.29
IRHG54110 600K Rads (Si) 0.29
IRHG58110 1000K Rads (Si) 0.31
I
D
1.6A
1.6A
1.6A
1.6A
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
130
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
1.6
1.0
6.4
1.4
0.011
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
1.6
0.14
6.5
-55 to 150
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
o
C
A
For footnotes refer to the last page
Pre-Irradiation
PD - 94432A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHG9110 | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET) |
| IRHG93110 | Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET) |
| IRHLF630Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF640Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
| IRHLF670Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHG57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57214SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHG58110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG593110 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。