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參數(shù)資料
| 型號： | IRHLF730Z4 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| 中文描述： | 抗輻射邏輯電平功率MOSFET通孔（到39） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 150K |
| 代理商： | IRHLF730Z4 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
1.6*
1.0*
6.4
5.0
0.04
±10
9.0
1.6
0.5
3.5
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
o
C
A
04/07/04
www.irf.com
1
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHLF770Z4 100K Rads (Si) 0.5
1.6A*
IRHLF730Z4 300K Rads (Si) 0.5
1.6A*
IRHLF740Z4 600K Rads (Si) 0.5
1.6A*
IRHLF780Z4 1000K Rads (Si) 0.5
1.6A*
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED IRHLF770Z4
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
T0-39
Features:
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLF7970Z4
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4
International Rectifier’s R7
TM
Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
PD - 94695B
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| IRHLF740Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHLF770Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHLF780Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) |
| IRHM53160 | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOSFET) |
| IRHM54160 | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOSFET) |
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| IRHLF73110 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
| IRHLF73110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHLF73214 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
| IRHLF73214SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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