參數(shù)資料
型號: IRHM54Z60
廠商: International Rectifier
英文描述: 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET)
中文描述: 30V的N通道通孔抗輻射功率MOSFET(30V的,通孔安裝抗輻射功率?溝道MOSFET的)
文件頁數(shù): 7/8頁
文件大?。?/td> 106K
代理商: IRHM54Z60
www.irf.com
7
Pre-Irradiation
IRHM57Z60
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
500
1000
1500
2000
Starting T , Junction Temperature( C)
E
A
ID
16A
22A
35A
TOP
BOTTOM
.
相關(guān)PDF資料
PDF描述
IRHM53Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET)
IRHM57Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET)
IRHM58Z60 30V, N-Channel Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOSFET)
IRHM57264SE Thru-Hole Radiation Hardened Power MOSFET(通孔安裝抗輻射功率MOSFET)
IRHM7054 HEXFET Transistor(HEXFET 晶體管)
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