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參數(shù)資料
| 型號： | IRHM57Z60DPBF |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-254AA, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 106K |
| 代理商： | IRHM57Z60DPBF |
IRHM57Z60
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.8 mH
Peak IL = 35A, VGS = 12V
ISD
≤
35A, di/dt
≤
132A/
μ
s,
VDD
≤
30V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — TO-254AA
CAUTION
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
31.40 [1.235]
30.35 [1.195]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA BEFORE LEADFORMING.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
4.06 [.160]
3.56 [.140]
B
R 1.52 [.060]
1
2
3
4.82 [.190]
3.81 [.150]
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
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