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參數(shù)資料
| 型號： | IRHM9160 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份證\u003d- 35 *甲） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 134K |
| 代理商： | IRHM9160 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
-80
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-80
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
-800
—
—
—
—
—
—
0.5
-100
-160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
-100
V
GS
Bias
(V)
5
Parameter
Typ.
Units
Ion
BVDSS
-100
V
Ni
Radiation Performance of P-Channel
Rad Hard HEXFETs
IRHM9160 Device
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHM9160
100K Rads (Si)
min.
-100
-2.0
—
—
—
—
Units
Test Conditions
max.
—
-4.0
-100
100
-25
0.087
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -22A
nA
μ
A
V
SD
—
-3.3
V
TC = 25°C, IS = -35A,V
GS
= 0V
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environment and results are shown in
Table 3.
To Order
Next Data Sheet
Index
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