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參數(shù)資料
| 型號： | IRHM93160 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 94K |
| 代理商： | IRHM93160 |
IRHM9160, IRHM93160, JANSR-, JANSF-, 2N7425 Devices
www.irf.com
3
Table 1. Low Dose Rate
Parameter
IRHM9160 IRHM93160
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-100
—
-100
-2.0
-4.0
-2.0
—-
-100
—
—
100
—
—
-25
—
—
0.073
—
Test Conditions
Max
—
-5.0
-100
100
-25
0.073
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
= -22A
nA
μA
V
SD
—
-3.3
—
-3.3
V
TC = 25°C, IS = -35A,V
GS
= 0V
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at International Rectifier com prises
three radiation environments.
Every manufacturing lot is tested in a low dose rate
(tota l dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of -12 volts per note
5 and a V
bias condition equal to 80% of the device
rated voltage per note 6. Pre- and post- irradiation lim-
its of the devices irradiated to 1 x 10
5
Rads (Si) are
identicaland are presented in Table1,column1. Post-ir-
radiation limits of the devices irradiated to 3 x 10
5
Rads (Si) are presented in Table 1, column 2. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
Radiation
Characteristics
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 3 x 10
5
Rads (Si) the
only parametric limit change is V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-80
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-80
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
—
—
—
-800
—
—
—
0.5
100
—
—
—
A
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Ni 28
1x 10
5
~41 -100
5
Table 3. Single Event Effects
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