- 您現在的位置：買賣IC網 > PDF目錄377521 > IRHMS597160 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PDF資料下載
參數資料
| 型號： | IRHMS597160 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 174K |
| 代理商： | IRHMS597160 |
www.irf.com
3
Radiation Characteristics
IRHMS597160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300KRads(Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -10 — -10 μA V
DS
= -80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.05 — 0.05
V
GS
= -12V, I
D
= -30A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source On-State
— 0.05 — 0.05
V
GS
= -12V, I
D
= -30A
Resistance(Low-OhmicTO-254AA)
V
SD
Diode Forward Voltage
— -5.0 — -5.0 V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHMS597160
2. Part number IRHMS593160
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = -45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=17.5V
Br
37.9
252.6 33.1 -100 -100 -100 -100 -100
I
59.7
314 30.5 -100 -100 -100 -100 -75
Au
82.3
350 28.4 -100 -100 -100
LET
Energy Range
V
DS
(V)
-30 —
-100
-25
—
@V
GS
=20V
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
25
VGS
V
Br
I
Au
相關PDF資料 |
PDF描述 |
|---|---|
| IRHN7054 | HEXFET Transistor(HEXFET 晶體管) |
| IRHN8054 | HEXFET Transistor(HEXFET 晶體管) |
| IRHN7130 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |
| IRHN8130 | TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14) |
| IRHN7230 | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHMS597260 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHMS597260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS597260SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHMS597Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHMS597Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。