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參數(shù)資料
| 型號(hào)： | IRHN8054 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 97K |
| 代理商： | IRHN8054 |
www.irf.com
5
IRHN7054, IRHN8054, JANSR-,JANSH-,2N7394U Devices
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
13
35A
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.4
1.0
V ,Source-to-Drain Voltage (V)
1.6
2.2
2.8
3.4
4.0
I
S
V = 0 V
T = 25 C
°
T = 150 C
Pre-Irradiation
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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