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參數(shù)資料
| 型號(hào)： | IRHQ93110 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, 4 P-Channel Surface Mount Radiation Hardened Power MOSFET(100V,表貼型抗輻射功率四P溝道MOS場效應(yīng)管) |
| 中文描述： | 100V的，4個(gè)P -通道表面安裝抗輻射功率MOSFET（100V的，表貼型抗輻射功率四馬鞍山P溝道場效應(yīng)管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 117K |
| 代理商： | IRHQ93110 |
IRHQ9110
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L= 28.4mH,
Peak IL = -2.3A, VGS = -12V
ISD
≤
-2.3A, di/dt
≤
-244A/
μ
s,
VDD
≤
-100V, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions — LCC-28
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Data and specifications subject to change without notice. 3/00
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