參數(shù)資料
型號(hào): IRHY57130CM
廠商: International Rectifier
英文描述: 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
中文描述: 100V的N通道通孔抗輻射功率MOSFET(100V的,通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 118K
代理商: IRHY57130CM
www.irf.com
7
Pre-Irradiation
IRHY57130CM
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
30
60
90
120
150
Starting T , Junction Temperature( C)
E
ID
7.2A
10A
16A
TOP
BOTTOM
.
相關(guān)PDF資料
PDF描述
IRHY58130CM 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHY54130CM 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHY53230CM 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHY57230CM 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
IRHY58230CM 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管)
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