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參數(shù)資料
| 型號(hào)： | IRHY58Z30CM |
| 英文描述： | 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 30V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | IRHY58Z30CM |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
18*
18*
72
75
0.6
±20
110
18
7.5
10
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY57034CM
60V, N-CHANNEL
TECHNOLOGY
4/17/01
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHY57034CM 100K Rads (Si) 0.04
IRHY53034CM 300K Rads (Si) 0.04
IRHY54034CM 600K Rads (Si) 0.04
IRHY58034CM 1000K Rads (Si) 0.048
I
D
18A*
18A*
18A*
18A*
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
TO-257AA
PD - 93825A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHY593130CM | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA |
| IRHY593230CM | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY597130CM | -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY597230CM | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| IRHY7G30CMSE | 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593034CMSCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593130CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593130CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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