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參數(shù)資料
| 型號： | IRHY7130CM |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | IRHY7130CM |
Product Summary
Part Number
IRHY7130CM
IRHY8130CM
BV
DSS
100V
100V
R
DS(on)
0.18
0.18
I
D
14.4A
14.4A
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Avalanche Energy Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight
IRHY7130CM, IRHY8130CM
14.4
9.1
58
75
0.6
±20
150
6.0
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
V/ns
VGS
EAS
dv/dt
TJ
TSTG
7.0(typical)
g
Pre-Radiation
100Volt, 0.18
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD
HARD HEXFETs retain
identical
electrical specifica-
tions up to 1 x 10
5
Rads (Si) total dose. No compen-
sation in gate drive circuitry is required. These devices
are also capable of surviving transient ionization
pulses as high as 1 x 10
12
Rads (Si)/Sec, and return
to normal operation within a few microseconds. Since
the RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the indus-
try.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
o
C
A
Preliminary Data Sheet No. PD - 9.1274C
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7380
JANSH2N7380
[REF: MIL-PRF-19500/614]
HEXFET
TRANSISTOR
N-CHANNEL
MEGA RAD HARD
IRHY7130CM
IRHY8130CM
10/20/97
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