- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353632 > IRHY93230CM -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package PDF資料下載
參數(shù)資料
| 型號： | IRHY93230CM |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 269K |
| 代理商： | IRHY93230CM |
www.irf.com
3
Pre-Irradiation
IRHE7230, JANSR2N7262U
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)1
600 to 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
200
—
200
—
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
25
—
50
A
VDS=160V, VGS =0V
RDS(on)
Static Drain-to-Source
—
0.35
—
0.48
VGS = 12V, ID =3.5A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
—
0.35
—
0.48
VGS = 12V, ID =3.5A
On-State Resistance (LCC-18)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHE7230 (JANSR2N7262U)
2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U)
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
—
1.4
—
1.4
V
VGS = 0V, IS = 5.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0
-5
-10
-15
-20
VGS
VDS
Cu
Br
Ion
LET
Energy
Range
VDS(V)
MeV/(mg/cm2))
(MeV)
(m)
@
VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
28
285
43
190
180
170
125
—
Br
36.8
305
39
100
50
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRKH132-04 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|130A I(T) |
| IRKH132-06 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|130A I(T) |
| IRKH132-08 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|130A I(T) |
| IRKH132-10 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|130A I(T) |
| IRKH132-12 | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|130A I(T) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHYA597130CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R6 - Bulk |
| IRHYB593034CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| IRHYB593Z30CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
| IRHYB597034CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHYB597Z30CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。