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參數(shù)資料
| 型號： | IRKN4116A |
| 廠商： | International Rectifier |
| 英文描述： | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 242K |
| 代理商： | IRKN4116A |
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
2
www.irf.com
I
T(AV)
Max. average on-state
current (Thyristors)
Maximum average
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
45
45
60
60
180
o
conduction, half sine wave,
T
C
= 85
o
C
I
F(AV)
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
850
890
715
750
940
1310
1370
1100
1150
1450
t=10ms
t=8.3ms reapplied
t=10ms
t=8.3ms reapplied
t=10ms
No voltage
100% V
RRM
T
J
= 25
o
C,
985
3.61
3.30
2.56
2.33
4.42
4.03
1520
8.56
7.82
6.05
5.53
10.05
9.60
t=8.3ms no voltage reapplied
t=10ms
No voltage
t=8.3ms reapplied
t=10ms
100% V
RRM
t=8.3ms reapplied
t=10ms
T
J
= 25
o
C,
t=8.3ms no voltage reapplied
I
2
t
Max. I
2
t for fusing
I
2
√
t
Max. I
2
√
t for fusing (1)
36.1
85.6
KA
2
√
s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
voltage (2)
r
t
slope resistance (2)
V
TM
V
FM
di/dt
Max. non-repetitive rate
of rise of turned on
0.88
0.91
5.90
5.74
0.85
0.88
3.53
3.41
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= 25
o
C, from 0.67 V
DRM
,
I
TM
=
π
x I
T(AV)
,
I
g
= 500mA,
t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
Max. value of on-state
Max. peak on-state or
forward voltage
current
I
L
Max. latching current
400
T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
Parameters
IRK.41
IRK.56
Units
Conditions
100
135
(1) I
2
t for time t
x
=
I
2
√
t
x
√
t
x
(4)
I >
π
x I
AV
(2) Average power
=
V
T(TO)
x
I
T(AV)
+
r
t
x
(I
T(RMS)
)
2
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
On-state Conduction
I
H
Max. holding current
200
Initial T
J
= T
J
max.
150
A/μs
A
KA
2
s
V
m
1.81
1.54
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum
repetitive
peak reverse voltage
V
400
600
800
1000
1200
1400
1600
V
RSM
, maximum
peak reverse voltage
V
500
700
900
1100
1300
1500
1700
V
, max. repetitive
peak off-state voltage,
gate open circuit
V
400
600
800
1000
1200
1400
1600
I
RRM
I
DRM
125°C
mA
Voltage
Code
-
04
06
08
10
12
14
16
IRK.41/ .56
15
Sinusoidal
half wave,
Initial T
J
= T
J
max.
T
J
= 25°C
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