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參數(shù)資料
| 型號(hào)： | IRKN4116AS90 |
| 廠商： | International Rectifier |
| 英文描述： | THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
| 中文描述： | 晶閘管/二極管和晶閘管/晶閘管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 242K |
| 代理商： | IRKN4116AS90 |
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
3
www.irf.com
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
T
J
Junction operating
temperature range
Storage temp. range
T
stg
R
thJC
- 40 to 125
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
0.23
0.20
Per module, DC operation
R
thCS
T
to heatsink
busbar
5
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
Units
Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. IRKT41/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt
Max. critical rate of rise
of off-state voltage (5)
T
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
500
V/
μ
s
Blocking
V
INS
RMS isolation voltage
V
Triggering
P
GM
P
G(AV)
Max. average gate power
I
GM
-V
GM
gate voltage
Max. peak gate power
10
10
2.5
2.5
Max. peak gate current
Max. peak negative
2.5
2.5
A
4.0
2.5
1.7
270
150
80
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
= 125
o
C,
rated V
DRM
applied
T
= 125
o
C,
rated V
DRM
applied
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
I
GD
Parameters
IRK.41
IRK.56
Units
Conditions
0.25
V
6
mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
Parameters
IRK.41
IRK.56
Units
Conditions
Sine half wave conduction
Rect. wave conduction
Devices
Units
180
o
0.11
0.09
120
o
0.13
0.11
90
o
0.17
0.13
60
o
0.23
0.18
30
o
0.34
0.27
180
o
0.09
0.07
120
o
0.14
0.11
90
o
0.18
0.14
60
o
0.23
0.19
30
o
0.34
0.28
IRK.41
IRK.56
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
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