參數(shù)資料
型號(hào): IRKTF112-04HLN
廠商: International Rectifier
英文描述: FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
中文描述: 快速晶閘管/二極管和晶閘管/晶閘管
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 141K
代理商: IRKTF112-04HLN
IRK.F112.. Series
3
Bulletin I27091 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
°C
T
stg
Max. storage temperature range
- 40 to 150
R
thJC
Max. thermal resistance, junction to
0.17
K/W
Per junction, DC operation
case
R
thC-hs
Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/μs
T
J
= 125°C., exponential to 67% V
DRM
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
Maximum peak reverse and off-state
leakage current
30
mA
Parameter
IRK.F112..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/μs
Gate drive 20V, 20
, tr
1ms, V
D
= 80% V
DRM
T
J
= 125°C
I
TM
= 350A, di/dt = -25A/μs, V
R
= 50V, T
J
= 25°C
I
TM
= 350A, T
J
= 125°C, di/dt = -25A/μs,
V
R
= 50V, dv/dt = 400V/μs linear to 80% V
DRM
t
rr
t
q
Maximum recovery time
2
μs
Maximum turn-off time
N
L
10
15
μs
Parameter
IRK.F112..
Units Conditions
Switching
Parameter
IRK.F112..
Units Conditions
Triggering
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
Maximum peak average gate power
10
W
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Maximum peak positive gate current
10
A
Maximum peak negative gate voltage
5
V
Max. DC gate current required to trigger
200
mA
T
J
= 25°C, V
ak
12V, Ra = 6
DC gate voltage required to trigger
3
V
DC gate current not to trigger
20
mA
T
J
= 125°C, rated V
DRM
applied
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F112..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
相關(guān)PDF資料
PDF描述
IRKTF111-04HNN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112-04HNN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF111-08HNN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKTF112-08HNN FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
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IRKTF180-12HJ 功能描述:SCR模塊 1200 Volt 180 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流(Ih 最大值): 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
IRKTF180-12HK 功能描述:SCR模塊 1200 Volt 180 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流(Ih 最大值): 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
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