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參數(shù)資料
| 型號： | IRKU41/08AS90PBF |
| 元件分類： | 晶閘管 |
| 英文描述： | 70 A, 800 V, SCR, TO-240AA |
| 封裝： | ADD-A-PAK-7 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IRKU41/08AS90PBF |
IRKU/V41, 56 Series
3
Bulletin I27134 rev. E 10/02
www.irf.com
T
J
Junction operating
temperature range
Storage temper. range
T
stg
R
thJC
- 40 to 125
Max. internal thermal
resistance, junction
to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
0.23
0.20
Per module, DC operation
R
thCS
T
to heatsink
busbar
3
wt
Approximate weight
110 (4)
g (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRKU/V41
IRKU/V56
Units
Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. IRKU41/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
15
mA
T
J
= 125
o
C, gate open circuit
V
INS
RMS isolation voltage
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt
Max. critical rate of rise
of off-state voltage (5)
T
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
Triggering
P
GM
P
G(AV)
Max. average gate power
I
GM
-V
GM
gate voltage
Max. peak gate power
10
10
2.5
2.5
Max. peak gate current
Max. peak negative
2.5
2.5
A
V
GT
Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
= 125
o
C,
rated V
DRM
applied
T
= 125
o
C,
rated V
DRM
applied
I
GT
Max. gate current
required to trigger
mA
V
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
I
GD
Parameters
IRKU/V41
IRKU/V56
Units
Conditions
0.25
V
6
mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
Parameters
IRKU/V41, 56
Units
Conditions
Blocking
V
500
V/
μ
s
Sine half wave conduction
120
o
90
o
0.13
0.17
0.11
0.13
Rect. wave conduction
120
o
90
o
0.14
0.18
0.11
0.14
Devices
Units
180
o
0.11
0.09
60
o
0.23
0.18
30
o
0.34
0.27
180
o
0.09
0.07
60
o
0.23
0.19
30
o
0.34
0.28
IRKU/V41
IRKU/V56
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
相關PDF資料 |
PDF描述 |
|---|---|
| IRKU71/04APBF | 115 A, 400 V, SCR, TO-240AA |
| IRKV105/10S90 | 164.85 A, 1000 V, SCR |
| IRKV105/14S90 | 164.85 A, 1400 V, SCR |
| IRKV105/06S90 | 164.85 A, 600 V, SCR |
| IRKU105/10S90 | 164.85 A, 1000 V, SCR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRKU41-08S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|40A I(T) |
| IRKU41-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|40A I(T) |
| IRKU41-10S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|40A I(T) |
| IRKU41-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|40A I(T) |
| IRKU41-12S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|40A I(T) |
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