參數(shù)資料
型號(hào)： IRL1404
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 124K
代理商： IRL1404
2
www.irf.com
Parameter
Min. Typ. Max. Units
40
–––
–––
0.038 –––
–––
–––
–––
–––
1.0
–––
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
–––
270
–––
38
–––
37
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 95A
V
GS
= 4.3V, I
D
= 40A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 95A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 95A
V
DS
= 32V
V
GS
= 5.0V, See Fig. 6
V
DD
= 20V
I
D
= 95A
R
G
= 2.5
V
GS
= 4.5V
R
D
= 0.25
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
4.0
5.9
3.0
–––
20
250
200
-200
140
48
60
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6590
1710
350
6650
1510
1480
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
T
J
= 25°C, I
F
= 95A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
63
170
1.3
94
250
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
160
640
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11).
Starting T
J
= 25°C, L = 0.35mH
R
G
= 25
, I
AS
= 95A. (See Figure 12).
I
SD
≤
95A, di/dt
≤
160A/μs, V
DD
≤
V
(BR)DSS
,
T
≤
175°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
m
R
DS(on)
Static Drain-to-Source On-Resistance
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