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參數(shù)資料
| 型號： | IRL2910S |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 344K |
| 代理商： | IRL2910S |
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Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
D2
TO-262
相關PDF資料 |
PDF描述 |
|---|---|
| IRL3402 | N Channel HEXFET Power MOSFET(N 溝道HEXFET功率MOS場效應管) |
| IRL3705N | N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應管) |
| IRL3713 | SMPS MOSFET |
| IRL3713L | SMPS MOSFET |
| IRL3713S | SMPS MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRL2910SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 55A 3PIN D2PAK - Rail/Tube |
| IRL2910SPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL2910SPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRL2910SPBF | 制造商:International Rectifier 功能描述:MOSFET N CH 100V 55A D2PAK 制造商:International Rectifier 功能描述:MOSFET, N CH, 100V, 55A, D2PAK 制造商:International Rectifier 功能描述:MOSFET, N CH, 100V, 55A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| IRL2910STRL | 功能描述:MOSFET N-CH 100V 55A D2PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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