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參數(shù)資料
| 型號： | IRL3402 |
| 廠商： | International Rectifier |
| 英文描述： | N Channel HEXFET Power MOSFET(N 溝道HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | ?通道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 98K |
| 代理商： | IRL3402 |
IRL3402
Parameter
Min. Typ. Max. Units
20
–––
–––
0.02
–––
––– 0.010
–––
––– 0.008
0.70
–––
65
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
140
–––
80
–––
120
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 51A
V
GS
= 7.0V, I
D
= 51A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 51A
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 150°C
V
GS
= 10V
V
GS
= -10V
I
D
= 51A
V
DS
= 10V
V
GS
= 4.5V, See Fig. 6
V
DD
= 10V
I
D
= 51A
R
G
= 5.0
,
V
GS
= 4.5V
R
D
= 0.19
,
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 15V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
100
-100
78
18
30
–––
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3300 –––
1400 –––
510
pF
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 220μH
R
G
= 25
, I
AS
= 51A.
I
SD
≤
51A, di/dt
≤
82A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 51A, V
GS
= 0V
T
J
= 25°C, I
F
= 51A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
72
160
1.3
110
240
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
85
340
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
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