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參數(shù)資料
| 型號： | IRLI3615PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 176K |
| 代理商： | IRLI3615PBF |
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica barrier
with standard TO-220 product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
S
D
G
Parameter
Max.
14
9.8
56
45
0.30
±16
340
8.4
4.5
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
–––
Max.
3.3
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
V
DSS
= 150V
R
DS(on)
= 0.085
I
D
= 14A
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
07/23/04
www.irf.com
1
TO-220 FULLPAK
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI3705NPBF | HEXFET㈢Power MOSFET |
| IRLI3803PBF | HEXFET Power MOSFET |
| IRLI520NPBF | HEXFET Power MOSFET |
| IRLI530GPBF | HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16ヘ , ID=9.7A ) |
| IRLI530NPBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI3705 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLI3705G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 45A I(D) | TO-220VAR |
| IRLI3705N | 制造商:International Rectifier 功能描述:MOSFET N LOGIC FULLPAK |
| IRLI3705NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 52A 3-Pin(3+Tab) TO-220FP |
| IRLI3705NPBF | 功能描述:MOSFET MOSFT 55V 47A 10mOhm 65.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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