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參數(shù)資料
| 型號： | IRLM210 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進的功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 270K |
| 代理商： | IRLM210 |
IRLM210A
BV
DSS
= 200 V
R
DS(on)
= 1.5
I
D
= 0.77 A
200
0.77
0.62
6.1
±
20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
300
69.4
--
①
②
①
①
③
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 200V
n
Lower R
DS(ON)
: 1.185
(Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
*
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
o
C)
Continuous Drain Current (T
A
=70
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
*
P
D
*
Rev. A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLM210A | Advanced Power MOSFET |
| IRLR210 | ADVANCED POWER MOSFET |
| IRLR210A | ADVANCED POWER MOSFET |
| IRLU210A | ADVANCED POWER MOSFET |
| IRLRU210A | Advanced Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLM210A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM210ATF | 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLM220A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRLM220ATF | 功能描述:MOSFET 200V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLM6302TR | 制造商:International Rectifier 功能描述: |
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