- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377535 > IRLP3803 (International Rectifier) HEXFET Power MOSFET(HEXFET 功率MOS場效應管) PDF資料下載
參數(shù)資料
| 型號： | IRLP3803 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | IRLP3803 |
HEXFET
Power MOSFET
IRLP3803
PD - _____
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
V
DSS
= 30V
R
DS(on)
= 0.006
I
D
= 120A
8/4/95
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
1.0
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
PRELIMINARY
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter
Max.
120
83
470
150
1.0
±20
610
71
15
1.8
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLR014NPBF | HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14ヘ , ID = 10A ) |
| IRLU014NPBF | HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14ヘ , ID = 10A ) |
| IRLR014PBF | HEXFET㈢ Power MOSFET |
| IRLR024ZPBF | AUTOMOTIVE MOSFET |
| IRLU024ZPBF | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLR 3110ZPBF | 制造商:International Rectifier 功能描述:Bulk |
| IRLR 3636PBF | 制造商:International Rectifier 功能描述:Bulk |
| IRLR/U120A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLR/U120NPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Surface Mount (IRLR120N) |
| IRLR/U130A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。