參數(shù)資料
型號: IRLRU230A
廠商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先進(jìn)的功率MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 229K
代理商: IRLRU230A
IRLR/U230A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
I
D
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0.00
0.25
0.50
0.75
1.00
@ Note : T
J
= 25
o
C
V
GS
= 10 V
V
GS
= 5 V
R
D
]
D
I
D
, Drain Current [A]
0
4
16
20
0
2
4
6
V
DS
= 160 V
V
DS
= 100 V
V
DS
= 40 V
@ Notes : I
D
= 9 A
V
G
Q
G
, Total Gate Charge [nC]
0
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
= 40 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
180
360
540
720
900
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
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