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參數(shù)資料
| 型號： | IRS20124S |
| 廠商： | International Rectifier |
| 英文描述： | DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION |
| 中文描述： | 數(shù)字音頻驅(qū)動與離散死區(qū)時間和保護(hù) |
| 文件頁數(shù)： | 20/24頁 |
| 文件大小： | 218K |
| 代理商： | IRS20124S |
IRS20124S(PbF)
20
www.irf.com
Functional description
Programmable Dead-time
The IRS20124 has an internal dead-time generation
block to reduce the number of external components
in the output stage of a Class D audio amplifier.
Selectable dead-time through the DT/SD pin volt-
age is an easy and reliable function, which re-
quires only two external resistors. The dead-time
generation block is also designed to provide a
constant dead-time interval, independent of Vcc
fluctuations. Since the timings are critical to the
audio performance of a Class D audio amplifier,
the unique internal dead-time generation block is
designed to be immune to noise on the DT/SD
pin and the Vcc pin. Noise-free programmable
dead-time function is available by selecting dead-
time from four preset values, which are optimized
and compensated.
How to Determine Optimal Dead-time
Please note that the effective dead-time in an actual
application differs from the dead-time specified in
this datasheet due to finite fall time, tf. The dead-
time value in this datasheet is defined as the time
period from the starting point of turn-off on one
side of the switching stage to the starting point of
turn-on on the other side as shown in Fig.5. The
fall time of MOSFET gate voltage must be sub-
tracted from the dead-time value in the datasheet
to determine the effective dead time of a Class D
audio amplifier.
(Effective dead-time)
= (Dead-time in datasheet) – (fall time, tf)
HO (or LO)
LO (or HO)
tf
Dead-
time
Effective dead-time
10%
10%
90%
Figure 6. Effective Dead-time
A longer dead time period is required for a MOSFET
with a larger gate charge value because of the
longer tf. A shorter effective dead-time setting is
always beneficial to achieve better linearity in the
Class D switching stage. However, the likelihood
of shoot-through current increases with narrower
dead-time settings in mass production. Negative
values of effective dead-time may cause excessive
heat dissipation in the MOSFETs, potentially
leading to their serious damage. To calculate the
optimal dead-time in a given application, the fall
time tf for both output voltages, HO and LO, in the
actual circuit needs to be measured. In addition,
the effective dead-time can also vary with
temperature and device parameter variations.
Therefore, a minimum effective dead-time of 10nS
is recommended to avoid shoot-through current
over the range of operating temperatures and
supply voltages.
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| IRS2092SPBF | PROTECTED DIGITAL AUDIO AMPLIFIER |
| IRS2092STRPBF | PROTECTED DIGITAL AUDIO AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS20124SPBF | 功能描述:功率驅(qū)動器IC DIGITAL AUDIO DRVR 200V 1A 60ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20124STRPBF | 功能描述:功率驅(qū)動器IC Dig Aud Drvr w/Deadtime & Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2052M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:2 CH Digital Audio Amplifier |
| IRS2052MPBF | 制造商:International Rectifier 功能描述:IRS2053 Series 3 Channel 6.2 W 60 dB Half Bridge Digital Audio Amplifier-MLPQ-48 |
| IRS2052MTRPBF | 功能描述:功率驅(qū)動器IC Gen5 HVIC 200V 48L 2Ch Dig Aud Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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