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參數(shù)資料
| 型號： | IRS20955PBF |
| 廠商： | International Rectifier |
| 英文描述： | PROTECTED DIGITAL AUDIO DRIVER |
| 中文描述： | 受保護的數(shù)字音頻驅(qū)動程序 |
| 文件頁數(shù)： | 17/21頁 |
| 文件大小： | 524K |
| 代理商： | IRS20955PBF |
IRS20955
(
S
)
PbF
PRELIMINARY
Power Supply Decoupling
As the IRS20955S contains analog circuitry, careful
attention must be given to decoupling the power
supplies for proper operation. Ceramic capacitors of
0.1 μF or more should be placed close to the power
supply pins of the IC on the board.
Please refer to the application note AN-978 for
general design considerations of a high voltage gate
driver IC.
V
SS
Negative Bias Clamping
V
SS
can go below COM when a negative supply is
missing in a dual supply configuration. In this case,
excessive negative V
SS
voltage with respect to COM
could damage the IRS20955S. Having a diode to
clamp potential negative biases to V
SS
is
recommended to protect the IC. A standard
recovery diode with a current rating of 1 A such as
the 1N4002 is sufficient for this purpose.
www.irf.com
17
VB
VDD
IN
CSD
VSS
COM
OCSET
LO
VCC
HO
VS
DT
CSH
NC
NC
VREF
Negative VSS
Clamping Diode
-Vbus
Figure 21. Negative V
SS
Clamping
Junction Temperature Estimation
The power dissipation in the IRS20955S is
dominated by the following items:
-
P
MID
: Power dissipation of the floating input
logic and protection circuitry
-
P
LSM
: Power dissipation of the input level
shifter
-
P
LOW
: Power dissipation in low-side
-
P
LSH
: Power dissipation of the high-side
level shifter
-
P
HIGH
: Power dissipation in high-side
1. P
MID
: Power Dissipation of the Floating
Input Logic and Protection Circuitry
The power dissipation of the floating input
section is given by:
DD
DD
DD
BUS
LDD
P
ZDD
P
MID
P
V
R
V
V
≈
+
=
+
where
P
ZDD
= the power dissipation from the internal
Zener diode clamping V
DD
P
LDD
= the power dissipation from the internal
logic circuitry
V
+BUS
= the positive bus voltage feeding V
DD
R
DD
= the resistor feeding V
DD
from V
+BUS
*For obtaining the value of R
DD
, refer to the
section “Supplying V
DD
.”
2. P
LSM
: Power Dissipation of the Input
Level Shifter
P
LSM
= 2 nC x f
sw
x V
SS,BIAS
where
f
SW
= the PWM switching frequency
V
SS,BIAS
= the bias voltage of V
SS
with respect to
COM
3. P
LOW
: Power Dissipation in Low-Side
The power dissipation in low-side comes from
the losses of the logic circuitry and the losses of
driving LO.
+
=
LO
LDD
LOW
P
P
P
(
)
+
+
+
=
(int)
g
g
O
O
SW
g
CC
QCC
R
R
R
R
f
Q
Vcc
V
I
where
P
LDD
= the power dissipation from the internal logic
circuitry
P
LO
= the power dissipation from the gate drive
stage to LO
R
O
= the output impedance of LO, typically 10
for
the IRS20955S
R
g(int)
= the internal gate resistance of the low side
MOSFET driver, typically 10
for the IRS20955S
R
g
= the external gate resistance of the low side
MOSFET
Qg = total gate charge of the low side MOSFET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRS20955SPBF | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20955STRPBF | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20957SPBF | 功能描述:功率驅(qū)動器IC Prot DIG Audio DRVR 100V 1.0A 500ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS20957SPBF | 制造商:International Rectifier 功能描述:IC MOSFET DRIVER HIGH-SPEED SOIC-16 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH-SPEED, SOIC-16 |
| IRS20957STRPBF | 功能描述:功率驅(qū)動器IC Class D Aud Drvr IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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