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參數(shù)資料
| 型號(hào)： | IRS20955SPBF |
| 廠商： | International Rectifier |
| 英文描述： | PROTECTED DIGITAL AUDIO DRIVER |
| 中文描述： | 受保護(hù)的數(shù)字音頻驅(qū)動(dòng)程序 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 524K |
| 代理商： | IRS20955SPBF |
IRS20955
(
S
)
PbF
PRELIMINARY
www.irf.com
13
OC
REF
OCREF
5.1V
COM
OCSET
VS
OC
+
-
IRS20955
OC Comparator
R4
R5
-B
+B
OUT
Q1
Q2
LO
LO
0.5mA
Figure 13. Low-side Over-Current Sensing
Low-Side Over-Current Setting
Let the low-side MOSFET have an R
DS(ON)
of 100
m
and set the current trip level to 30 A. V
OCSET
is
given by:
V
OCSET
= I
TRIP+
x R
DS(ON)
= 30 A x 100 m
= 3.0 V
Choose R4+R5=10 k
to properly load the VREF
pin.
V
R
5
=
=
=
k
k
V
V
k
V
REF
OCSET
8
10
1
0
10
where V
REF
= 5.1 V
Based on the E-12 series of resistor values, choose
R5 to be 5.6 k
and R4 to be 3.9 k
to complete
the design.
In general, R
DS(ON)
has a positive temperature
coefficient that needs to be considered when setting
the threshold level. Variations in R
DS(ON)
will affect
the selection of external or internal component
values.
High-Side Over-Current Sensing
For positive load currents, high-side over current
sensing also monitors the load condition and shuts
down the switching operation if the load current
exceeds the preset trip level.
High-side current sensing is based on the
measurement of V
DS
across the high-side MOFET
during high-side turn on through pins CSH and VS.
In order to avoid triggering OCP from overshoot, a
blanking interval inserted after HO turn on disables
over current detection for 450 ns.
In contrast to low-side current sensing, the threshold
at which the CSH pin engages OC protection is
internally fixed at 1.2 V. An external resistive divider
R2 and R3 can be used to program a higher
threshold.
An external reverse blocking diode, D1, is required
to block high voltages from feeding into the CSH pin
while the high-side is off.
Due to a forward voltage
drop of 0.6 V across D1, the minimum threshold
required for high-side over current protection is 0.6
V.
(
3
2
R
R
+
where V
DS(HIGH SIDE)
= the drain to source voltage of
the high-side MOSFET during high-side turn on
V
F(D1)
= the forward drop voltage of D1
Since V
DS(HIGH SIDE)
is determined by the product of
drain current I
D
and R
DS(ON)
of the high-side
MOSFET. V
CSH
can be rewritten as:
(
3
2
R
R
+
Note: The reverse blocking diode D1 is forward
biased by a 10 k
resistor R1 when the high-side
MOSFET is on.
)
)
(
)
(
3
D
F
HIGHSIDE
DS
CSH
V
V
R
V
+
=
)
)
(
)
(
3
D
F
D
ON
DS
CSH
V
I
R
R
V
+
=
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| IRS20957SPBF | 制造商:International Rectifier 功能描述:IC MOSFET DRIVER HIGH-SPEED SOIC-16 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH-SPEED, SOIC-16 |
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| IRS2101PBF | 功能描述:功率驅(qū)動(dòng)器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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