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IS1682
OPIC Light Detector
Tec.IS980701
Recommended Operating Conditions
Parameter
Operating supply voltage
Operating supply voltage 1
Operating supply voltage 2
Electrical Characteristics 1
Parameter
Supply current
Output off-set voltage 1
Output off-set voltage 2
(Ta=25C)
Unit
V
V
V
Symbol
Vcc
Vs
Vs
MIN.
4.75
2.0
2.4
TYP.
5.0
2.1
2.5
MAX.
5.25
2.2
2.6
(Ta=25C,Vcc=5V,Vs=2.1V,R
L
=10k
[ V
RF
terminal : R
L
= 0
] C
L
= 10 pF)
Conditions
MIN.
TYP.
8.8
14.8
25
0
15
0
1.25
1.4
20
0
20
0
20
0
15
0
40
+5
A+B+C+D
(Ta=25C,Vcc=5V,Vs=2.5V,R
L
=10k
[ V
RF
terminal : R
L
= 0
] C
L
= 10 pF)
Symbol
Icc
V
od1
V
od2
V
od3
MAX.
20
+25
+15
1.55
+20
+20
+20
+15
+50
Unit
mA
mV
mV
V
Applications
Vcc
V
A
to V
D
V
E
,V
F
V
RF
V
A
,V
B
V
C
,V
D
V
A
to V
D
V
E
,V
F
V
od
mV
V
A
to V
D
Extremes of off-set voltage
Output off-set voltage 3
Specified by voltage difference from Vs
Specified by voltage difference from Vs
Refered to GND
A - B
C - D
(A+C) - (B+D)
E - F
*3 10μW,
φ
30μm of DC light is applied to the center of each photodiode.
Under that condition, sensitivity R is shown by following formula.
R=(V
p
-V
od
)/5μW
*4 Light source : laser diode of
λ
=780nm
*5 Extreme of sensitivity is shown by following formula.
2 x (Rp
1
max-Rp
1
min)/(Rp
1
max+Rp
1
min) x 100
2 x (Rp
2
max-Rp
2
min)/(Rp
2
max+Rp
2
min) x 100
*6 Frequency sensitivity is -3dB.(reference sensitivity : value at f= 1 MHz)
*7 In addition to 10μW,
φ
30μm DC light, 4μWp-p AC light is applied to the center of each photodiode. BW=10kHz
Electrical Characteristics 2
-
-
-
-
6
6
2.5
2.5
-81
-70
V
RF
-
-
-
V
RF
V
E
,V
F
V
A
to V
D
V
RF
Parameter
Symbol
R
P1
R
P2
R
P3
R
P
Conditions
-
-
-
-
-
-
-3dB
-3dB
-3dB
Averge of
V
A
to V
D
MIN.
18.0
31.2
30.2
TYP.
24.6
44.7
43.2
MAX.
31.2
58.1
56.1
10
-
Unit
Applications
V
A
to V
D
V
E
,V
F
*3*4 Sensitivity 1
*3*4 Sensitivity 2
*3*4 Sensitivity 3
mV/μW
mV/μW
mV/μW
%
-
-
MHz
MHz
MHz
MHz
*5 Extreme of sensitivity
Sensitivity ratio 1
Sensitivity ratio 2
R
P2
/R
P1
R
P3
/R
P1
f
c1
f
c2
f
c3
f
c4
-
-
-
-
-
1.81
1.76
65
75
3.8
-1.0
-1.0
1.67
34
55
1
45
1.84
-
-
V
A
to V
D
V
A
to V
D
V
RF
V
A
to V
D
V
RF
V
A
to V
F
V
A
to V
F
V
RF
*4*6 Response frequency 1
*4*6 Response frequency 2
*4*6 Response frequency 3
*4*6 Response frequency 4
*4 High level output voltage 1
*4 High level output voltage 2
*4 Response sensitivity
1
*4 Response sensitivity
2
tgd1
tgd2
V
n1
V
n2
Average of f=1 to 23.1MHz,VA to VD
f=1 to 23.1MHz
f=23.1MHz,BW=30kHz
f=23.1MHz,BW=30kHz
*4*7 Group delay deviation 1
*4*7 Group delay deviation 2
Output noise level 1
Output noise level 2
-
-
-
-
-
V
V
dB
dB
ns
ns
dBm
dBm
V
OH1
V
OH2
R
p1
R
p2
-76
-65
-
5
3.8
65
1 MHz to 23.1 MHz
1 MHz to 23.1 MHz
+1.0
+1.0
+2.0
+2.0
(Ta=25C,Vcc=5V,Vs=2.1V,R
L
=10k
[ V
RF
terminal : R
L
= 0
] C
L
= 10 pF)
Parameter
Symbol
V
od1
V
od2
V
od3
Conditions
MIN.
25
16
1.25
22
15
40
TYP.
+2
MAX.
+28
+16
1.55
+22
+15
Unit
mV
mV
V
Applications
V
A
to V
D
V
E
,V
F
V
RF
0
V
od
1.4
mV
0
0
V
A
to V
D
V
E
,V
F
V
A
to V
D
+62
+13
Output off-set voltage 4
Output off-set voltage 5
Extremes of off-set voltage
Output off-set voltage 6
Specified by voltage difference from Vs
Specified by voltage difference from Vs
Reffered to GND
(A+C) - (B+D)
E - F
A+B+C+D
As of June 1998