參數(shù)資料
型號: IS24C256-2GI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 262,144-bit 2-WIRE SERIAL CMOS EEPROM
中文描述: 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
封裝: SOIC-8
文件頁數(shù): 9/12頁
文件大?。?/td> 51K
代理商: IS24C256-2GI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
03/11/03
9
IS24C256
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
S
V
P
T
BIAS
T
STG
I
OUT
Parameter
Supply Voltage
Voltage on Any Pin
Temperature Under Bias
Storage Temperature
Output Current
Value
Unit
V
V
°C
°C
mA
+0.5 to +6.25
–0.5 to Vcc +0.5
–40 to +85
–65 to +150
5
Notes:
1. Stresses violating the conditions listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only. Functional operation of the
device outside these conditions or those indicated in the operational sections of this
specification is not implied. Exposure to these conditions for extended periods may affect
reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
OPERATING RANGE (IS24C256-3)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
2.5V to 5.5V
2.5V to 5.5V
OPERATING RANGE (IS24C256-2)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
1.8V to 5.5V
1.8V to 5.5V
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