參數(shù)資料
型號(hào): IS41C16128
廠商: Integrated Silicon Solution, Inc.
英文描述: 128K x 16 DRAM With EDO Page Mode(128K x 16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM)
中文描述: 128K的× 16的DRAM與江戶頁(yè)面模式(128K的× 16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 5/21頁(yè)
文件大?。?/td> 218K
代理商: IS41C16128
IS41C16128
Integrated Silicon Solution, Inc.
PRELIMINARY
DR002-1D
08/20/98
5
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
V
CC
I
OUT
P
D
T
A
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Operation Temperature
–1.0 to +7.0
–1.0 to +7.0
50
1
0 to +70
–40 to +85
–55 to +125
V
V
mA
W
°
C
Com.
Ind.
T
STG
Storage Temperature
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
V
IH
V
IL
T
A
Supply Voltage
Input High Voltage
Input Low Voltage
Ambient Temperature
4.5
2.4
–1.0
0
–40
5.0
5.5
V
V
V
°
C
VCC + 1.0
+0.8
+70
+85
Com.
Ind.
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A8
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O15
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, V
CC
= 5.0V + 10%.
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