參數(shù)資料
型號: IS41C44052
廠商: Integrated Silicon Solution, Inc.
英文描述: 4M x 4 DRAM With Fast Page Mode(5V,4M x 4 帶快速頁模式動態(tài)RAM(刷新 2K))
中文描述: 4米× 4的DRAM與快速頁面模式(5V的,4米× 4帶快速頁模式動態(tài)隨機存儲器(刷新2k)的)
文件頁數(shù): 4/17頁
文件大?。?/td> 137K
代理商: IS41C44052
4
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
01/31/01
IS41C4405
X
IS41LV4405
X
S
ERIES
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
1.0 to +7.0
0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°
C
T
STG
Storage Temperature
55 to +125
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
1.0
0.3
0
-40
5.0
3.3
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
°
C
°
C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz.
相關(guān)PDF資料
PDF描述
IS41LV44052 4M x 4 DRAM With Fast Page Mode(3.3V,4M x 4 帶快速頁模式動態(tài)RAM(刷新 2K))
IS41C44054 4M x 4 DRAM With Fast Page Mode(5V,4M x 4 帶快速頁模式動態(tài)RAM(刷新 4K))
IS41LV44054 4M x 4 DRAM With Fast Page Mode(3.3V,4M x 4 帶快速頁模式動態(tài)RAM(刷新 4K))
IS41C82002 2M x 8 DRAM With EDO Page Mode(5V,2M x 8 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K))
IS41LV82002 2M x 8 DRAM With EDO Page Mode(3.3V,2M x 8 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41C44052-50J 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
IS41C44052-50JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
IS41C44052-50T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
IS41C44052-50TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
IS41C44052-60J 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE