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參數(shù)資料
| 型號： | IS41C82002 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 2M x 8 DRAM With EDO Page Mode(5V,2M x 8 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K）) |
| 中文描述： | 200萬× 8的DRAM與江戶頁面模式（5V的，200萬× 8帶擴展數(shù)據(jù)輸出頁模式動態(tài)隨機存儲器（刷新2k）的） |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 185K |
| 代理商： | IS41C82002 |
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS41C82002
IS41LV82002
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
–1.0 to +7.0
–0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°C
T
STG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
–1.0
–0.3
0
-40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
°C
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
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| IS41LV82002 | 2M x 8 DRAM With EDO Page Mode(3.3V,2M x 8 帶擴展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K）) |
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| IS41C82002-50J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM |
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