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參數(shù)資料
| 型號(hào)： | IS41LV16100-60TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO44 |
| 封裝： | 0.400 INCH, LEADFREE, PLASTIC, TSOP2-50/44 |
| 文件頁(yè)數(shù)： | 8/20頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | IS41LV16100-60TLI |
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IS41C16100
IS41LV16100
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
04/16/03
ISSI
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
WP
Write Command Pulse Width
(17)
8
—
10
—
ns
t
WPZ
WE
Pulse Widths to Disable Outputs
10
—
10
—
ns
t
RWL
Write Command to
RAS
Lead Time
(17)
13
—
15
—
ns
t
CWL
Write Command to
CAS
Lead Time
(17, 21)
8
—
10
—
ns
t
WCS
Write Command Setup Time
(14, 17, 20)
0
—
0
—
ns
t
DHR
Data-in Hold Time (referenced to
RAS
)
39
—
39
—
ns
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
15
—
15
—
ns
t
OEH
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
8
—
10
—
ns
t
DS
Data-In Setup Time
(15, 22)
0
—
0
—
ns
t
DH
Data-In Hold Time
(15, 22)
8
—
10
—
ns
t
RWC
READ-MODIFY-WRITE Cycle Time
108
—
133
—
ns
t
RWD
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
64
—
77
—
ns
t
CWD
CAS
to
WE
Delay Time
(14, 20)
26
—
32
—
ns
t
AWD
Column-Address to
WE
Delay Time
(14)
39
—
47
—
ns
t
PC
EDO Page Mode READ or WRITE
Cycle Time
(24)
20
—
25
—
ns
t
RASP
RAS
Pulse Width in EDO Page Mode
50
100K
60
100K
ns
t
CPA
Access Time from
CAS
Precharge
(15)
—
30
—
35
ns
t
PRWC
EDO Page Mode READ-WRITE
Cycle Time
(24)
56
—
68
—
ns
t
COH
Data Output Hold after
CAS
LOW
5
—
5
—
ns
t
OFF
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
1.6
12
1.6
15
ns
t
WHZ
Output Disable Delay from
WE
3
10
3
10
ns
t
CLCH
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
10
—
10
—
ns
t
CSR
CAS
Setup Time (CBR REFRESH)
(30, 20)
5
—
5
—
ns
t
CHR
CAS
Hold Time (CBR REFRESH)
(30, 21)
8
—
10
—
ns
t
ORD
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
0
—
0
—
ns
t
REF
Auto Refresh Period (1,024 Cycles)
—
16
—
16
ms
t
REF
Self Refresh Period (1,024 Cycles)
—
128
—
128
ms
t
T
Transition Time (Rise or Fall)
(2, 3)
1
50
1
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41C16128 | 128K x 16 DRAM With EDO Page Mode(128K x 16帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM) |
| IS41C4100 | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-35J | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60J | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C4100-60JI | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16100A | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50K | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50KL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A-50KLI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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