參數(shù)資料
型號: IS41LV16100A-60KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 1M X 16 EDO DRAM, 60 ns, PDSO42
封裝: 0.400 INCH, SOJ-42
文件頁數(shù): 18/22頁
文件大小: 144K
代理商: IS41LV16100A-60KI
IS41LV16100A
18
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
03/02/05
ISSI
HIDDEN REFRESH CYCLE
(1)
(
WE
= HIGH;
OE
= LOW)
CBR
REFRESH CYCLE
(Addresses;
WE
,
OE
= DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
t
RAS
t
RAS
t
RP
t
RP
I/O
UCAS
/
LCAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
UCAS
/
LCAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Don’t Care
Undefined
相關(guān)PDF資料
PDF描述
IS41LV16100A-50K 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-50KI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-50KL 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-50KLI 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-60KL 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV16100A-60KL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-60KLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-60T 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip EDO 16M-Bit 1Mx16 3.3V 44-Pin TSOP-II
IS41LV16100A-60TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100A-60TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE