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參數(shù)資料
| 型號： | IS41LV4100-35J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 4 EDO DRAM, 35 ns, PDSO20 |
| 封裝： | 0.300 INCH, SOJ-20 |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 143K |
| 代理商： | IS41LV4100-35J |
IS41C4100
IS41LV4100
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
3.3V
5V
3.3V
–
1.0 to +7.0
-0.5 to 4.6
–
1.0 to +7.0
-0.5 to 4.6
50
1
0 to +70
–
40 to +85
–
55 to +125
V
V
V
V
mA
W
°
C
°
C
°
C
V
CC
Supply Voltage
I
OUT
P
D
T
A
Output Current
Power Dissipation
Commercial Operation Temperature
Industrail Temperature
Storage Temperature
T
STG
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz,
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
–
1.0
–
0.3
0
–
40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrail Ambient Temperature
°
C
°
C
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| IS41LV4100-60J | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60JI | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K）) |
| IS41C44004 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 4K）) |
| IS41LV44002 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV4100-60J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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