參數(shù)資料
型號: IS41LV4100
廠商: Integrated Silicon Solution, Inc.
英文描述: 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 1Meg × 4(4兆位)的動態(tài)與江戶頁面模式內(nèi)存
文件頁數(shù): 18/19頁
文件大小: 143K
代理商: IS41LV4100
IS41C4100
IS41LV4100
ISSI
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
HIDDEN REFRESH CYCLE (
WE
= HIGH;
OE
= LOW)
(1)
CBR
REFRESH CYCLE (Addresses;
WE
,
OE
= DON'T CARE)
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
t
RAS
t
RAS
t
RP
t
RP
I/O
CAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
CAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Don't Care
相關(guān)PDF資料
PDF描述
IS41LV4100-35J 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV4100-60J 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV4100-60JI 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 2K))
IS41C44004 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁模式動態(tài)RAM(刷新 4K))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41LV4100-35J 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV4100-60J 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV4100-60JI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44002-50J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 EDO Page Mode DRAM