參數(shù)資料
型號(hào): IS41LV44054
廠商: Integrated Silicon Solution, Inc.
英文描述: 4M x 4 DRAM With Fast Page Mode(3.3V,4M x 4 帶快速頁(yè)模式動(dòng)態(tài)RAM(刷新 4K))
中文描述: 4米× 4的DRAM與快速頁(yè)面模式(3.3伏,4米× 4帶快速頁(yè)模式動(dòng)態(tài)隨機(jī)存儲(chǔ)器(刷新4K的))
文件頁(yè)數(shù): 3/17頁(yè)
文件大?。?/td> 137K
代理商: IS41LV44054
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. B
01/31/01
3
IS41C4405
X
IS41LV4405
X
S
ERIES
ISSI
Functional Description
The IS41C4405x and IS41LV4405x are CMOS DRAMs
optimized for high-speed
bandwidth, low power applications.
During READ or WRITE cycles, each bit is uniquely
addressed through the 11 or 12 address bits. These are
entered 11 bits (A0-A10) at a time for the 2K refresh
device or 12 bits (A0-A11) at a time for the 4K refresh
device. The row address is latched by the Row Address
Strobe (
RAS
). The column address is latched by the
Column Address Strobe (
CAS
).
RAS
is used to latch the
first nine bits and
CAS
is used the latter ten bits.
Memory Cycle
A memory cycle is initiated by bring
RAS
LOW and it is
terminated by returning both
RAS
and
CAS
HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum t
RAS
time has expired. A new
cycle must not be initiated until the minimum precharge
time t
RP
, t
CP
has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of
CAS
or
OE
,
whichever occurs last, while holding
WE
HIGH. The
column address must be held for a minimum time speci-
fied by t
AR
. Data Out becomes valid only when t
RAC
, t
AA
,
t
CAC
and t
OEA
are all satisfied. As a result, the access time
is dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of
CAS
and
WE
, whichever occurs last. The input data must be valid
at or before the falling edge of
CAS
or
WE
, whichever
occurs last.
Auto Refresh Cycle
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in each
64ms period. There are two ways to refresh the memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through A11) with
RAS at least once every 32 ms or 64ms respectively.
Any read, write, read-modify-write or RAS-only cycle
refreshes the addressed row.
2.
Using a
CAS
-before-
RAS
refresh cycle.
CAS
-before-
RAS
refresh is activated by the falling edge of
RAS
, while
holding
CAS
LOW. In
CAS
-before-
RAS
refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.
CAS
-before-
RAS
is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the V
CC
supply, an initial pause of
200 μs is required followed by a minimum of eight
initialization cycles (any combination of cycles containing
a
RAS
signal).
During power-on, it is recommended that
RAS
track with
V
CC
or be held at a valid V
IH
to avoid current surges.
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