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| 型號： | IS42LS16800A-7T |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數(shù)： | 22/66頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42LS16800A-7T |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
29
ADVANCEDINFORMATION
Rev. 00A
06/01/02
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
REGISTER DEFINITION
Mode Register
The mode register is used to define the specific mode of
operation of the SDRAM. This definition includes the
selection of a burst length, a burst type, a CAS\ latency, an
operating mode and a write burst mode, as shown in MODE
REGISTER DEFINITION.
The mode register is programmed via the LOAD MODE
REGISTER command and will retain the stored information
until it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length, M3
specifies the type of burst (sequential or interleaved), M4- M6
specify the CAS latency, M7 and M8 specify the operating
mode, M9 specifies the WRITE burst mode, and M10 and
M11 are reserved for future use.
The mode register must be loaded when all banks are idle,
and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these
requirements will result in unspecified operation.
MODE REGISTER DEFINITION
Latency Mode
M6 M5 M4
CAS Latency
0
Reserved
0
1
Reserved
0
1
0
2
0
1
3
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Reserved
1. To ensure compatibility with future devices,
should program M11, M10 = "0, 0"
Write Burst Mode
M9
Mode
0
Programmed Burst Length
1
Single Location Access
Operating Mode
M8 M7
M6-M0
Mode
0
Defined
Standard Operation
— —
—
All Other States Reserved
Burst Type
M3
Type
0
Sequential
1
Interleaved
Burst Length
M2
M1
M0
M3=0
M3=1
0
1
0
1
2
0
1
0
4
0
1
8
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Full Page
Reserved
Address Bus
Mode Register (Mx)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
(1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42LS16800A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IC42S81600-7TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600-8TIG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-8TIG | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42LS16800A-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42LS32400A-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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